As complementary type the pnp transistor st 2sa733 is recommended. Bpage 1 of 32base1emittercollector datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Off time switching time equivalent test circuits scope rise time datasheet pdf 1. The transistor is subdivided into five groups, r, o, y, p and l, according to its dc current gain. Symbol parameter conditions value unit rthja thermal resistance from junction to ambient note 1 500 kw. Bc557, 557b general purpose transistor page 3 310505 v1. The 2n3904 is an npn transistor that can only switch onethird the current of the 2n2222 but has otherwise similar characteristics. Operating junction temperature 175 oc to18 to39 17 obsolete products obsolete products. Emitter saturation voltage vcesat ic 150ma, ib 15ma.
Datasheet identification product status definition. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. Off time switching time equivalent test circuits scope rise time storage time v cc 30 vdc, ic 150 madc, ts 225 ns fall time 30 vdc, i 150 madc, ib1 ib2 15 madc figure 2 t. Advance information formative or in design this datasheet contains the design specifications for product development. Aah 200711 mmbt2222a smd general purpose transistor npn. Storage time v cc 30 vdc, ic 150 madc, ts 225 ns fall time 30 vdc, i 150 madc, ib1 ib2 15 madc figure 2 t.
Storage time vcc 30 vdc, ic 150 madc, i i 15 ad fi 2 ts 225 ns fall time b1 ib2 15 madc figure 2 t f 60 ns 1. A listing of scillcs productpatent coverage may be accessed at. Operating and storage junction temperature range tj, tstg. It is available in the jan qualification system milprf19500 compliance and in the escc qualification system escc 5000 compliance. The 2n2222ahr is a silicon planar npn transistor specifically designed and housed in hermetic packages for aerospace and hirel applications. Siemens, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. It is designed for high speed switching application at collector current up to 500ma, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. Elektronische bauelemente2n2222anpn plastic encapsulated transistor01june2005 rev. The 2n2222 is a common npn bipolar junction transistor bjt used for general purpose lowpower amplifying or switching applications.
Operating junction temperature 175 oc to18 to39 2n2219a approved to cecc 50002100, 2n2222a approved to cecc 50002101 availableon request. The 2n2222a is a slight bit better in terms of vceo, vcbo, vebo. Bd235bd236 bd237bd238 complementary silicon power transistors sgsthomson preferred salestypes description the bd235 and bd237 are silicon epitaxialbase npn power transistors in jedec sot32 plastic package inteded for use in medium power linear and switching applications. Specifications may change in any manner without notice. Free packages are available maximum ratings rating symbol value unit collector. Amplifier transistors npn silicon maximum ratings rating symbol value unit collectoremitter voltage vceo 40 vdc collectorbase voltage vcbo 75 vdc. Operating junction temperature 150 oc ordering code marking package shipment 2n3906 2n3906 to92 bulk 2n3906ap 2n3906 to92 ammopack. Off time switching time equivalent test circuits scope rise time storage time t s 225 ns fall time t f 60 ns v cc 30v, ic 150ma, i b1 i.
General purpose transistors npn silicon maximum ratings rating symbol value unit collectoremitter voltage pn2222 pn2222a vceo 30 40 vdc collectorbase voltage pn2222 pn2222a vcbo 60 75 vdc. Pn2222 general purpose transistor jameco electronics. Off time switching time equivalent test circuits scope rise time storage temperature 65 to 200 oc tj max. The devices maximum voltage tolerance breakdown voltage across its collector and base is 60 volts for 2n2222 and 75 volts for 2n2222a, with the emitters kept open. Designed for high speed switching application at collector current 0. Ta 25 c unless otherwise specified parameter symbol test conditions min typ max unit on characteristics note 1 dc current gain hfe vce 10v ic 0. Oct 24, 2015 2n2222 datasheet pdf, 2n2222 datasheet, 2n2222 pdf, pinouts, circuit, ic, manual, 2n2222 substitute, parts, 2n2222 datenblatt, schematic, reference. But if you are not planning on stressing the part higher voltages, etc both will work well, especially for simple switching and logic circuits. Jans2n2222a npn silicon switching transistor components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Uln2803 darlington transistor array dip18 2n5401 pnp generalpurpose amplifier transistor 2n3906 pnp amplifier transistor 2n3904 npn amplifier transistor price. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. The 2n3904 exhibits its forward gain beta peak at a lower current than the 2n2222, and is useful in amplifier applications with reduced i c, e. It was originally made in the to18 metal can as shown in the picture the 2n2222 is considered a very common transistor, and is used as an exemplar. Off time switching time equivalent test circuits scope rise time transistors, 2n2222a datasheet, 2n2222a circuit, 2n2222a data sheet.
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